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Sapphire Wafer (Offer to Sell)

Helios New Materials Co., Ltd.
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Trade Lead Description:

Sapphire Wafer Application:
Growth substrate for III-V and II-VI compounds
Electronics and optoelectronics
IR applications
Silicon On Sapphire Integrated Circuit (SOS)
Radio Frequency Integrated Circuit (RFIC)


Regular specification of Sapphire Wafer
Crystal Material: min 99.995%, High Purity, Monocrystalline Al2O3
Diameter: 50.8mm+/-0.1mm; 76.2mm+/-0.25mm; 100.0mm+/-0.2mm; 150.0+/-0.5mm
Thickness: 430+/-25um; 650+/-25um; 650+/-25um; 1300+/-25um
Orientation: C-axis (0001) to M (1-100) 0.2°±0.1°and C-axis (0001) to A (11-20) 0°±0.1°
Single Side Polish:
TTV max 3um; max5um; max5um; max 15um
Double Side Polish:
TTV max3um; max2.5um; max2.5um; max3um
Type of Offer: Offer to Sell
Quantity: Not Specified
Packaging: Not Specified
Price / Incoterms Conditions: Not Specified

Posted from China - Jiangsu on 14 February, 2014
Contact Information

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Company Details
Company Name: Helios New Materials Co., Ltd.
Contact Person: Edy Tian
Location: China - Jiangsu
Hotels in Jiangsu, China
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Classification: Machinery & Electronics - Electronic Components
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Helios New Materials Co., Ltd.
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1 Product on sale
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